vishay siliconix si8497db document number: 63355 s11-1385-rev. a, 11-jul-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 30 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? ultra-small 1.5 mm x 1 mm maximum outline ? ultra-thin 0.59 maximum height ? compliant to rohs directive 2002/95/ec applications ? low on-resistance load switch, charger switch, ovp switch and battery switch for portable devices - low power consumption - increased battery life - space savings on pcb notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. refer to ipc/jedec (j-std -020), no manual or hand soldering. d. based on t c = 25 c. product summary v ds (v) r ds(on) ( ? ) max. i d (a) d q g (typ.) - 30 0.053 at v gs = - 4.5 v - 13 16.3 nc 0.071 at v gs = - 2.5 v - 11 0.120 at v gs = - 2.0 v - 5 micro foot device markin g : 8 497 xxx = date/lot tracea b ility code orderin g information: si 8 497db-t2-e1 (lead (p b )-free and halogen-free) dd ss sg 1 2 6 3 5 4 b u mp side v ie w 8 497 xxx backside v ie w s g d p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 13 a t c = 70 c - 10 t a = 25 c - 5.9 a, b t a = 70 c - 4.7 a, b pulsed drain current (t = 300 s) i dm - 20 continuous source-drain diode current t c = 25 c i s - 11 t a = 25 c - 2.3 a, b maximum power dissipation t c = 25 c p d 13 w t c = 70 c 8.4 t a = 25 c 2.77 a, b t a = 70 c 1.77 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c package reflow conditions c ir/convection 260
www.vishay.com 2 document number: 63355 s11-1385-rev. a, 11-jul-11 vishay siliconix si8497db this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady state conditions is 85 c/w. c. case is defined as top surface of the package. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b r thja 37 45 c/w maximum junction-to-case (drain) c steady state r thjc 79.5 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = - 250 a - 30 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 29 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 3.1 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.5 - 1.1 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 70 c - 10 on-state drain current a i d(on) v ds ?? - 5 v, v gs = - 4.5 v - 5 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 1.5 a 0.043 0.053 ? v gs = - 2.5 v, i d = - 1 a 0.058 0.071 v gs = - 2 v, i d = - 0.5 a 0.075 0.120 forward transconductance a g fs v ds = - 15 v, i d = - 1.5 a 10 s dynamic b input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 1320 pf output capacitance c oss 121 reverse transfer capacitance c rss 102 total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 1.5 a 32.6 49 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 1.5 a 16.3 25 gate-source charge q gs 2.5 gate-drain charge q gd 4.9 gate resistance r g v gs = - 0.1 v, f = 1 mhz 8 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 10 ? i d ? - 1.5 a, v gen = - 4.5 v, r g = 1 ? 17 35 ns rise time t r 15 30 turn-off delay time t d(off) 60 120 fall time t f 25 50 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 10 ? i d ? - 1.5 a, v gen = - 10 v, r g = 1 ? 50 100 rise time t r 10 20 turn-off delay time t d(off) 75 150 fall time t f 22 45
document number: 63355 s11-1385-rev. a, 11-jul-11 www.vishay.com 3 vishay siliconix si8497db this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 15 a pulse diode forward current i sm - 20 body diode voltage v sd i s = - 1.5 a, v gs = 0 - 0.73 - 1.2 v body diode reverse recovery time t rr i f = - 1.5 a, di/dt = 100 a/s, t j = 25 c 21 40 ns body diode reverse recovery charge q rr 715nc reverse recovery fall time t a 8 ns reverse recovery rise time t b 13
www.vishay.com 4 document number: 63355 s11-1385-rev. a, 11-jul-11 vishay siliconix si8497db this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 2 v v gs = 5 v thru 2.5 v v gs = 1.5 v 0.00 0.04 0.08 0.12 0.16 0.20 0 5 10 15 20 r ds(on) - on-resistance () i d -drain current (a) v gs = 2 v v gs = 2.5 v v gs = 4.5 v 0 2 4 6 8 10 0 5 10 15 20 25 30 35 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 24 v v ds = 7.5 v v ds = 15 v i d = 1.5 a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) i d = 0.5 a; v gs = 2 v i d = 1.5 a; v gs = 2.5 v i d = 1.5 a; v gs = 4.5 v
document number: 63355 s11-1385-rev. a, 11-jul-11 www.vishay.com 5 vishay siliconix si8497db this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j -temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.04 0.08 0.12 0.16 012345 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 1.5 a 0 5 10 15 20 25 30 power (w) pulse (s) 10 1000 0.1 0.01 0.001 100 1 safe operating area, junction-to-ambient 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied 10 s 100 us 100 ms limited by r ds(on) * 1 ms t a = 25 c bvdss limited 10 ms 1 s dc
www.vishay.com 6 document number: 63355 s11-1385-rev. a, 11-jul-11 vishay siliconix si8497db this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 4 8 12 16 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) power derating 0 3 6 9 12 15 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
document number: 63355 s11-1385-rev. a, 11-jul-11 www.vishay.com 7 vishay siliconix si8497db this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 0 1 0 1 1 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized ef fective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.1 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02 0.05 single pulse
www.vishay.com document number: 63355 s11-1385-rev. a, 11-jul-11 8 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 vishay siliconix si8497db package outline micro foot: 6-bump (2 x 3, 0.5 mm pitch) notes (unless other wise specified): 1. all dimensions are in millimeters. 2. six (6) solder bumps are lead (pb)-fr ee 95.5sn, 3.8ag, 0.7cu with diameter ?? 0.30 to 0.32 mm. 3. backside surface is coated with a ti/ni/ag layer. 4. non-solder mask defined copper landing pad. 5. ? is location of pin 1. note: a. use millimeters as the primary measurement. vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63355 . e e e s s d d s g a b c 1 2 recommended land e e mark on backside of die s xxx 8 497 a a1 a2 s d e s s e 6 x ? 0.24 to 0.26 n ote 3 solder mask ~ ? 0.25 b u mp n ote 2 6 x ? b dim. millimeters a inches min. nom. max. min. nom. max. a 0.510 0.575 0.590 0.0201 0.0224 0.0232 a 1 0.220 0.250 0.280 0.0087 0.0098 0.0110 a 2 0.290 0.300 0.310 0.0114 0.0118 0.0122 b 0.300 0.310 0.320 0.0118 0.0122 0.0126 e 0.500 0.0197 s 0.230 0.250 0.270 0.0090 0.0098 0.0106 d 0.920 0.960 1.000 0.0362 0.0378 0.0394 e 1.420 1.460 1.500 0.0559 0.0575 0.0591
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
